Zig-zag mimo head reducing space between three sensors

ABSTRACT

The embodiments disclosed generally relate to a magnetic recording head having three magnetoresistive effect elements. The structure comprises a first magnetoresistive effect element on a lower magnetic shield layer. Additionally, two lower electrodes are disposed on the two sides of the first magnetoresistive effect element. A second magnetoresistive effect element is disposed on a lower electrode while a third magnetoresistive effect element on another lower electrode. An upper magnetic shield layer is disposed between the second magnetoresistive effect element and the third magnetoresistive effect element. The upper magnetic shield also serves as an electrode of the first magnetoresistive effect element.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments disclosed herein generally relate to a current perpendicularto plane (CPP) type magnetoresistive effect head as a magneticreproduction head, and a magnetic recording and reproduction device inwhich the CPP type magnetoresistive effect head is installed.

2. Description of the Related Art

Magnetoresistive effect magnetic heads are used as sensors forreproducing magnetic information recorded on magnetic media in highdensity magnetic recording devices such as hard disks, and is a partthat greatly affects the performance of magnetic recording technology.

In recent years, magnetic reproduction heads are used that use theso-called giant magnet resistive effect (hereafter referred to as GMR),and so on, namely the magnetoresistive effect of a multilayer film inwhich ferromagnetic metal layers are stacked with nonmagneticintermediate layers therebetween. The first GMR heads used were thecurrent in plane (CIP) type in which an electrical signal flows parallelwithin the plane of a sensor film. In order to increase the recordingdensity, the tunneling magnet resistive effect (TMR) head and thecurrent perpendicular to a plane giant magnet resistive effect (GMR)head were developed considering the advantage of high output with narrowtracks and narrow gaps, so in recent years TMR heads have become themainstream in magnetic reproduction heads. Unlike the conventional GMRhead, the TMR head and the CPP-GMR head are CPP type heads in whichelectrical signals flow in the direction perpendicular to the filmsurface, and this is the major difference from CIP type heads in whichthe electrical signal flows parallel within the plane of the sensorfilm.

In order to respond to the demand for even higher density recording inrecent years, the effective track width of magnetoresistive sensors hasbeen made narrower, but this has caused the element resistance toincrease, the noise to increase, and sensitivity to reduce, and hasproduced the separate issue that it is difficult to increase thesensitivity. In order to further increase the density three element typemagnetic heads have been proposed as shown in FIG. 1.

The magnetic head in FIG. 1 includes a lower shield/electrode layer 101having two magnetoresistive effect elements 113, 114 disposed thereover.An insulating layer 4 is disposed over the lower shield layer 101 andalong a portion of the two magnetoresistive effect elements 113, 114.Over the insulating layer 104, an element side layer 110 is present. Theelement side layer 110 is also disposed between the two magnetoresistiveeffect elements 113, 114. A mask pattern 118 is formed over the elementside layer, insulating layer 104 and magnetoresistive effect element 113while an upper electrode forming film 119 is formed over the elementside layer 110, insulating layer 104 and magnetoresistive effect element114. Another insulating layer 104 is formed over the mask pattern 118,exposed element side layer 110 and upper electrode forming film 119. Asecond upper electrode 120 is then formed over the upper electrodeforming film 119 and the element side layer 110. A magnetoresistiveeffect element 102, magnetic domain control film 117 and upper shieldlayer 112 are formed thereover.

The advantage of three element magnetic heads is that by producing amagnetic head having several elements whose size is larger than the bitsize of the medium, it is possible to read the bit data from thedifferences of the plurality of signals obtained. Because the elementsize can be larger than for a single element, noise can be controlledand sensitivity increased.

Each of the elements of the three element type reproduction element canbe produced at a size that is larger than the recording bit size, but inorder to extract the signal it is necessary to provide wiring layersbetween the first magnetoresistive effect element and the firstmagnetoresistive effect element and the second magnetoresistive effectelement, the third magnetoresistive effect element. Therefore ifterminals are provided, the distance between each element is increasedand the distance between shields is increased.

It is an object of the disclosure to reduce the vertical distancebetween sensors in a three element type reproduction element, to reducethe distance between shields, and to reduce the lead gap.

SUMMARY OF THE INVENTION

The embodiments disclosed generally relate to a magnetic recording headhaving three magnetoresistive effect elements. The structure comprises afirst magnetoresistive effect element on a lower magnetic shield layer.Additionally, two lower electrodes are disposed on the two sides of thefirst magnetoresistive effect element. A second magnetoresistive effectelement is disposed on a lower electrode while a third magnetoresistiveeffect element on another lower electrode. An upper magnetic shieldlayer is disposed between the second magnetoresistive effect element andthe third magnetoresistive effect element. The upper magnetic shieldalso serves as an electrode of the first magnetoresistive effectelement.

In one embodiment, a magnetic recording head comprises a firstmagnetoresistive effect element disposed on a first lower electrode; asecond lower electrode disposed adjacent a first side of the firstmagnetoresistive effect element; a third lower electrode disposedadjacent a second side of the first magnetoresistive effect element; asecond magnetoresistive effect element disposed on the second lowerelectrode; a third magnetoresistive effect element disposed on the thirdlower electrode; and a first upper electrode disposed between the secondmagnetoresistive effect element and the third magnetoresistive effectelement.

In another embodiment, a magnetic recording head comprises a lowermagnetic shield; a first upper electrode; and a first magnetoresistiveeffect element, a second magnetoresistive effective element and a thirdmagnetoresistive effect element disposed between the lower magneticshield and the first upper element. The second magnetoresistive effectelement is disposed on the lower magnetic shield; the thirdmagnetoresistive effect element is disposed on the lower magneticshield; a first lower electrode is disposed on the lower magnetic shieldand between the second magnetoresistive effect element and the thirdmagnetoresistive effect element; the first magnetoresistive effectelement is disposed on the first lower electrode; and the first upperelectrode is disposed on the first magnetoresistive effect element.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features can be understoodin detail, a more particular description of the invention, brieflysummarized above, may be had by reference to embodiments, some of whichare illustrated in the appended drawings. It is to be noted, however,that the appended drawings illustrate only typical embodiments of thisinvention and are therefore not to be considered limiting of its scope,for the invention may admit to other equally effective embodiments.

FIG. 1 is a schematic illustration of the configuration of a CPPmagnetic recording head.

FIG. 2 is a schematic illustration of the configuration of a CPPmagnetic recording head according to one embodiment.

FIGS. 3A-3L are schematic illustrations of a CPP magnetic recording headat various stages of manufacturing according to the first embodiment.

FIGS. 4A-4M are schematic illustrations of a CPP magnetic recording headat various stages of manufacturing according to the second embodiment.

FIGS. 5A-5M are schematic illustrations of a CPP magnetic recording headat various stages of manufacturing according to the first embodiment.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

In the following, reference is made to embodiments of the invention.However, it should be understood that the invention is not limited tospecific described embodiments. Instead, any combination of thefollowing features and elements, whether related to differentembodiments or not, is contemplated to implement and practice theinvention. Furthermore, although embodiments of the invention mayachieve advantages over other possible solutions and/or over the priorart, whether or not a particular advantage is achieved by a givenembodiment is not limiting of the invention. Thus, the followingaspects, features, embodiments and advantages are merely illustrativeand are not considered elements or limitations of the appended claimsexcept where explicitly recited in a claim(s). Likewise, reference to“the invention” shall not be construed as a generalization of anyinventive subject matter disclosed herein and shall not be considered tobe an element or limitation of the appended claims except whereexplicitly recited in a claim(s).

The embodiments disclosed generally relate to a magnetic recording headhaving three magnetoresistive effect elements. The structure comprises afirst magnetoresistive effect element on a lower magnetic shield layer.Additionally, two lower electrodes are disposed on the two sides of thefirst magnetoresistive effect element. A second magnetoresistive effectelement is disposed on a lower electrode while a third magnetoresistiveeffect element on another lower electrode. An upper magnetic shieldlayer is disposed between the second magnetoresistive effect element andthe third magnetoresistive effect element. The upper magnetic shieldalso serves as an electrode of the first magnetoresistive effectelement.

FIG. 2 shows a configuration in principle of the disclosed embodiments.In the structure, the second lower electrode 215 and the third lowerelectrode 216 are provided on the two sides of the firstmagnetoresistive effect element 102, and the upper shield layer 112 isused as a common electrode for each of the magnetoresistive effectelements 102, 113, 114, so it is possible to reduce the distance betweenthe three elements 102, 113, 114, and it is possible to reduce thedistance between the lower magnetic shield layer 101 and the uppermagnetic shield layer 112, so it is possible to have a narrow lead gap.

In general, the method of manufacturing the reproduction magnetic headincludes: forming a lower magnetic shield layer 101; forming amagnetoresistive effect film 302 on the lower magnetic shield layer 101;forming a track pattern mask 303 on the magnetoresistive film 302;etching the magnetoresistive effect film 302 to form themagnetoresistive effect element 102; stacking an insulating layer 104and lower electrode film 305 while leaving the track pattern mask 303 inplace; removing the track pattern mask 303 and separating a second lowerelectrode 215 and a third lower electrode 216; forming a secondmagnetoresistive effect film 306 on the second lower electrode 215 andthe third lower electrode 216; forming a second track pattern mask 308on the second magnetoresistive effect film 306; etching the secondmagnetoresistive effect film 306 to form second and thirdmagnetoresistive effect elements 113, 114; stacking a second insulatinglayer 209 and an element side layer 110 while leaving the track patternmask 308 in place; forming a mask 311 for forming an upper shield;exposing a first magnetoresistive effect element 102 by removing a partof the second insulating layer that is exposed using the mask 311 forforming an upper shield as the mask; stacking an upper magnetic shieldlayer 112; and removing the mask 111 for forming the upper shield 112.

FIRST EMBODIMENT

Next, the process of manufacturing the reproduction magnetic headaccording to a first embodiment is explained with reference to FIGS.3A-3L. As shown in FIG. 3A, a lower magnetic shield layer 101 made fromNiFe is provided on an Al₂O₃—TiC wafer that forms a slider parentmaterial, with an Al₂O₃ film therebetween (neither shown on thedrawings). Next a magnetoresistive effect film 302 having a free layer,a barrier layer, and a fixed layer is formed using the sputteringmethod. The magnetoresistive effect film 302 is made from, for example,a 1 nm Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nmCoFeB fixed layer, a tunnel insulation layer made from MgO, and a freelayer made from a stacked film of 5 nm of CoFeB and 2 nm of NiFe.

As shown in FIG. 3B, a track pattern mask 303 is formed on themagnetoresistive effect film 302 so as to provide at track width of 5 to50 nm, for example 20 nm. Next, the magnetoresistive effect film 302 isetched using the track pattern mask 303 as a mask by Ar ion milling orRIE, to expose the lower shield layer 101 and form the firstmagnetoresistive effect element 102.

As shown in FIG. 3C, an insulating layer 104 is deposited as is a lowerelectrode 305. A material with low electrical resistivity may be used inthe lower electrode 305. The lower electrode 305 and be combined with aside shield (not shown) in which case a soft magnetic material with aretention force of 3 Oe or less, a metal alloy including a soft magneticmaterial, or a stacked film that includes a soft magnetic material ispreferable. The lower electrode may be combined with a magnetic domaincontrol film; in which case a ferromagnetic material with retentionforce of 500 Oe or higher, a metal alloy that includes a ferromagneticmaterial, or a stacked film that includes a ferromagnetic material ispreferable. In the embodiment shown in FIG. 3C, a lower electrode 305made from CoPt having a thickness between 5 and 100 nm, for example, 13nm, is deposited using the long throw sputtering method (LTS) which hasexcellent straightness.

Next, the track pattern mask 303 is removed by lifting off or bychemical mechanical polishing (CMP) as shown in FIG. 3D. The lowerelectrode 305 is now divided to form the second lower electrode 215 andthe third lower electrode 216. A second magnetoresistive effect film 306is formed having a free layer, a barrier layer, and a fixed layer by thesputtering method as shown in FIG. 3E. The magnetoresistive effect film306 is made from, for example, a 1 nm Ta substrate layer, a 5 nm IrMnantiferromagnetic layer, a 2 nm CoFeB fixed layer, a tunnel insulationfilm made from MgO, and a free layer made from a stacked film of 5 nmCoFeB, 2 nm NiFe. A CMP stopper layer 307 is formed. The CMP stopperlayer 307 is preferably any of the metal materials Ta, Ti, W, Nb, V, Zr,and Ir, or, a metal alloy that includes these metals, or, an oxide thatincludes these metals, or, a nitride that includes these metals, or, anyof SiC, SiN, and DLC.

Next, a second track pattern mask 308 is formed on the CMP stopper layer307 in which the track width is 5 to 30 nm, for example 20 nm, by spacertype double patterning using an ArF liquid immersion light exposuremachine as shown in FIG. 3F. An ArF light exposure machine or an ArFliquid immersion light exposure machine may be used for forming thetrack mask 308. The light exposure machine may use normal light exposureand double patterning as the light exposure method, using an ArF lightexposure machine or an ArF liquid immersion light exposure machine, orextreme ultraviolet lithography (EUV).

Next, the second magnetoresistive effect element 113 and the thirdmagnetoresistive effect element 114 are formed by Ar ion milling or RIEusing the second track patterning mask 308 as the mask, by etching thesecond magnetoresistive effect film 306 and exposing the second lowerelectrode 215 and the third lower electrode 216. Next, a secondinsulation film 209 is formed from Al₂O₃ with a thickness of 1 to 30 nm,for example, 2 nm, using the sputtering method as shown in FIG. 3G.Then, an element side layer 110 is deposited. The element side layer 110may be combined with a side shield; in which case a soft magneticmaterial with a retention force of 3 Oe or less, a metal alloy thatincludes a soft magnetic material, or a stacked film that includes asoft magnetic material is preferable. The element side layer 110 may becombined with a magnetic domain control layer in which case aferromagnetic material with a retention force of 500 Oe or higher, ametal alloy that includes a ferromagnetic material, or a stacked filmthat includes a ferromagnetic material is preferable. Here, afterforming an insulating film 209 made from Al₂O₃ with a thickness of 1 to30 nm, for example 2 nm, using the sputtering method, for example alower electrode 305 made from CoPt with a thickness of 5 to 100 nm, forexample 13 nm, is deposited using the long throw sputtering method(LTS), which has excellent straightness.

Next, a mask 311 for an upper shield is formed as shown in FIG. 3H. Aportion of the second insulation layer 209 and a portion of the elementside layer 110 are exposed by Ar ion milling or RIE using the mask 311for the upper shield as a mask, to expose the first magnetoresistiveeffect element 102 as shown in FIG. 3I.

Next, an upper shield layer 112 made from NiFe is deposited bysputtering or by plating as shown in FIG. 3J. Then, the secondinsulation layer 209, the element side layer magnetic domain controlfilm 110, the mask 311 for forming the upper shield, and the uppershield layer 112 deposited on the second track patterning mask 308 areremoved by performing a flattening process by CMP using the CMP stopperlayer 307 as a CMP stopper as shown in FIG. 3K. The CMP stopper layer307 and a portion of the element side layer 110 are removed by Ar ionmilling or RIE, then the upper magnetic shield layer 112 is providedusing the sputtering method, to complete the basic configuration of themagnetic reproduction head according to the first embodiment as shown inFIG. 3L.

SECOND EMBODIMENT

Next, a manufacturing process for a magnetic reproduction head accordingto a second embodiment is explained with reference to FIGS. 4A-4M. Firsta lower magnetic shield layer 101 made from NiFe is provided on anAl₂O₃—TiC wafer that forms a slider parent material, with an Al₂O₃ filmtherebetween (neither shown on the drawings). Then, a magnetoresistiveeffect film 402 having a free layer, a barrier layer, and a fixed layeris formed using the sputtering method as shown in FIG. 4A. Themagnetoresistive effect film 402 is made from, for example, a 1 nm Tasubstrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm CoFeB fixedlayer, a tunnel insulation film made from MgO, and a free layer madefrom a stacked film of 5 nm of CoFeB and 2 nm of NiFe.

Next, a track pattern mask 403 is formed on the magnetoresistive effectfilm 402 so as to provide a track width of 5 to 50 nm, for example 20 nmas shown in FIG. 4B. Then, the magnetoresistive effect film 402 isetched using the track pattern mask 403 as a mask by Ar ion milling orRIE, to expose the lower shield layer 101 and form the firstmagnetoresistive effect element 102. A lower electrode 405 is depositedwherein a material with low electrical resistivity may be used. Also thelower electrode 405 can be combined with a side shield; in which case asoft magnetic material with retention force of 3 Oe or less, a metalalloy including a soft magnetic material, or a stacked film thatincludes a soft magnetic material is preferable. Additionally, the lowerelectrode 405 may be combined with a magnetic domain control film; inwhich this case a ferromagnetic material with retention force of 500 Oeor higher, a metal alloy that includes a ferromagnetic material, or astacked film that includes a ferromagnetic material is preferable. Asshown in FIG. 4C, a lower electrode 405 made from CoPt having athickness between 5 and 100 nm, for example 13 nm, is deposited usingthe long throw sputtering method (LTS) which has excellent straightnessas shown in FIG. 4C.

Next, the track pattern mask 403 is removed by lifting off or bychemical mechanical polishing (CMP) as shown in FIG. 4D such that thelower electrode 405 is divided to form the second lower electrode 215and the third lower electrode 216. Thereafter, a second magnetoresistiveeffect film 406 is formed having a free layer, a barrier layer, and afixed layer by the sputtering method. The magnetoresistive effect film406 is made from, for example, a 1 nm Ta substrate layer, a 5 nm IrMnantiferromagnetic layer, a 2 nm CoFeB fixed layer, a tunnel insulationfilm made from MgO, and a free layer made from a stacked film of 5 nmCoFeB, 2 nm NiFe. A CMP stopper layer 407 then formed on themagnetoresistive effect film 406 as shown in FIG. 4E. The CMP stopperlayer 407 is preferably any of the metal materials Ta, Ti, W, Nb, V, Zr,Ir, or, a metal alloy that includes these metals, or, an oxide thatincludes these metals, or, a nitride that includes these metals, or, anyof SiC, SiN, and DLC.

Next, a track wide pattern mask 424 is formed on the CMP stopper layer407 in which the track width is 50 to 200 nm, for example 100 nm asshown in FIG. 4F.

Next, the second magnetoresistive effect film 406 is etched by Ar ionmilling or RIE using the track wide pattern mask 424 as a mask, toexpose the second lower electrode 215 and the third lower electrode 216.Then, a second insulation film 209 is formed from Al₂O₃ with a thicknessof 1 to 30 nm, for example 2 nm, using the sputtering method.Thereafter, an element side layer 110 is deposited. The element sidelayer 110 may be combined with a side shield; in which case a softmagnetic material with a retention force of 3 Oe or less, a metal alloythat includes a soft magnetic material, or a stacked film that includesa soft magnetic material is preferable. Additionally, the element sidelayer 110 may be combined with a magnetic domain control layer; in whichcase a ferromagnetic material with a retention force of 500 Oe orhigher, a metal alloy that includes a ferromagnetic material, or astacked film that includes a ferromagnetic material is preferable. Here,after forming an insulating film 209 made from Al₂O₃ with a thickness of1 to 30 nm, for example 2 nm, using the sputtering method, side layer110 made from CoPt with a thickness of 5 to 100 nm, for example 13 nm,is deposited using the long throw sputtering method (LTS), which hasexcellent straightness as shown in FIG. 4G.

Thereafter, the second insulation layer 209 and the element side layermagnetic domain control film 110 deposited on the track wide patternmask 424 are removed by carrying out a flattening process by CMP usingthe CMP stopper layer 407 as a CMP stopper, and flattening the surfaceas shown in FIG. 4H.

Next, a pattern mask 418 with a mask width of 20 to 100 nm, for example30 nm, is formed on the CMP stopper layer 407 as shown in FIG. 4I. Afterremoving a portion of the exposed CMP stopper layer 407 and a portion ofthe element side layer 110 by Ar ion milling using the pattern mask 418as a mask, an upper electrode forming film 419 is formed covering themask pattern 418. Preferably, the upper electrode forming film 419 is amaterial with low electrical resistivity.

Then, the mask pattern 418 is removed by lifting off or by chemicalmechanical polishing (hereafter referred to as CMP) as shown in FIG. 4J.The upper electrode forming film 419 is divided to form the second upperelectrode 420 and the third upper electrode 421.

Next, a third insulation layer 422 made from Al₂O₃ is formed on thesecond upper electrode 420 and the third upper electrode 421 using thesputtering method and having a thickness of 1 to 30 nm, for example 2 nmas shown in FIG. 4K. Then, a trench pattern 423 is formed over the thirdinsulation layer 422 as shown in FIG. 4L. The third insulation layer 422is removed by Ar ion milling using a trench pattern 423 as a mask, toexpose the first magnetoresistive effect element 102.

After removing the trench pattern 423 by lifting off, an upper magneticshield layer 112 is provided by the sputtering method, therebycompleting the basic configuration of the magnetic reproduction headaccording to the second embodiment as shown in FIG. 4M.

THIRD EMBODIMENT

Next, a process of manufacturing a magnetic reproduction head accordingto a third embodiment is explained with reference to FIGS. 5A-5M. First,a lower magnetic shield layer 101 made from NiFe is provided on anAl₂O₃—TiC wafer that forms a slider parent material, with an Al₂O₃ filmtherebetween (neither shown on the drawings). Next a secondmagnetoresistive effect film 506 having a free layer, a barrier layer,and a fixed layer is formed using the sputtering method as shown in FIG.5A. The magnetoresistive effect film 506 is made from, for example, a 1nm Ta substrate layer, a 5 nm IrMn antiferromagnetic layer, a 2 nm CoFeBfixed layer, a tunnel insulation layer made from MgO, and a free layermade from a stacked film of 5 nm of CoFeB and 2 nm of NiFe. Then, a CMPstopper layer 507 is formed. The CMP stopper layer 507 is preferably anyof the metal materials Ta, Ti, W, Nb, V, Zr, Ir, or, a metal alloy thatincludes these metals, or, an oxide that includes these metals, or, anitride that includes these metals, or, any of SiC, SiN, and DLC.

Next, a track wide pattern mask 524 is formed on the CMP stopper layer507 in which the track width is 50 to 200 nm, for example 100 nm, asshown in FIG. 5B. The second magnetoresistive effect film 506 is etchedby Ar ion milling or RIE using the using the track wide pattern mask 524as a mask, to expose the lower magnetic shield layer 101. A secondinsulation film 509 is formed from Al₂O₃ with a thickness of 1 to 30 nm,for example 2 nm, using the sputtering method. The element side layer110 is deposited. The element side layer 110 may be combined with a sideshield; in which case a soft magnetic material with a retention force of3 Oe or less, a metal alloy that includes a soft magnetic material, or astacked film that includes a soft magnetic material is preferable.Additionally, the element side layer 110 may be combined with a magneticdomain control layer; in which case a ferromagnetic material with aretention force of 500 Oe or higher, a metal alloy that includes aferromagnetic material, or a stacked film that includes a ferromagneticmaterial is preferable. After forming the insulating film 509 made fromAl₂O₃ with a thickness of 1 to 30 nm, for example 2 nm, using thesputtering method, for example an element side layer 110 made from CoPtwith a thickness of 5 to 100 nm, for example 13 nm, is deposited usingthe long throw sputtering method (LTS), which has excellent straightnessas shown in FIG. 5C.

The second insulation layer 509 and the element side layer magneticdomain control film 110 deposited on the track wide pattern mask 524 areremoved by carrying out a flattening process by CMP using the CMPstopper layer 507 as a CMP stopper, and flattening the surface as shownin FIG. 5D. A pattern mask 518 with a mask width of 20 to 100 nm, forexample 30 nm, is formed on the CMP stopper layer 507. After removing aportion of the exposed CMP stopper layer 507 and a portion of theelement side layer 110 by Ar ion milling using the pattern mask 518 as amask, an upper electrode forming film 519 is formed covering the maskpattern 518 as shown in FIG. 5E. The upper electrode forming film 519 isa material with low electrical resistivity.

The mask pattern 518 is removed by lifting off or by chemical mechanicalpolishing (hereafter referred to as CMP) as shown in FIG. 5F. The upperelectrode forming film 519 is divided to form the second upper electrode520 and the third upper electrode 521.

A third insulation layer 522 made from Al₂O₃ is formed on the secondupper electrode 520 and the third upper electrode 521 using thesputtering method and having a thickness of 1 to 30 nm, for example 2 nmas shown in FIG. 5G. Thereafter, a trench pattern 523 is formed as shownin FIG. 5H. The third insulation layer 522 is removed by Ar ion millingusing the trench pattern 523 as a mask, to expose the lower shield 101.

After removing the trench pattern 523 by lifting off, a first lowerelectrode 525 is formed as shown in FIG. 5I. The first lower electrode525 may be combined with a magnetic shield; in which case a softmagnetic material with retention force of 3 Oe are less, a metal alloythat contains a soft magnetic material, or a stacked film that containsa soft magnetic material is preferable. In the embodiment shown in FIG.5I, a film of NiFe with thickness of 1 to 50 nm, for example 30 nm, isformed using the sputtering method.

Next, a flattening process is carried out by ion milling or CMP, andthen a magnetoresistive effect film 502 having a free layer, a barrierlayer, and a fixed layer is formed using the sputtering method as shownin FIG. 5J. The magnetoresistive effect film 502 is made from, forexample, a 1 nm Ta substrate layer, a 5 nm IrMn antiferromagnetic layer,a 2 nm CoFeB fixed layer, a tunnel insulation film made from MgO, and afree layer made from a stacked film of 5 nm CoFeB, 2 nm NiFe.

Then, a track pattern mask 503 is formed on the magnetoresistive effectfilm 502 provided with a track width of 5 to 50 nm, for example 20 nm.The magnetoresistive effect film 502 is etched by Ar ion milling or RIEusing the track pattern mask 503 as a mask, to expose the second upperelectrode 520 and the third upper electrode 521 and form the firstmagnetoresistive effect element 102. Thereafter, a lower electrode 505is deposited. The material may be a low electrical resistivity material.Additionally, the lower electrode 505 may be combined with a sideshield; in which case a soft magnetic material having a retention forceof 3 Oe or less, a metal alloy that includes a soft magnetic material,or a stacked film that includes a soft magnetic material is preferable.The lower electrode 505 may also be combined with a magnetic domaincontrol film; in which case a ferromagnetic material having a retentionforce of 500 Oe or higher, a metal alloy that includes a ferromagneticmaterial, or a stacked film that includes a ferromagnetic material ispreferable. In the embodiment shown in FIG. 5K, the lower electrode 505is made from CoPt having a thickness of 5 to 100 nm, for example 13 nm,is deposited using the long throw sputtering method (LTS) which hasexcellent straightness.

Next, the track pattern mask 503 is removed by lifting off or bychemical mechanical polishing (hereafter referred to as CMP) as shown inFIG. 5L. The lower electrode 505 is divided to form the second lowerelectrode 215 and the third lower electrode 216. Finally, the uppermagnetic shield layer 112 is provided using the sputtering method, tocomplete the basic configuration of the magnetic reproduction headaccording to the third embodiment as shown in FIG. 5M

As shown in FIGS. 2, 3L, 4M and 5M, the magnetoresistive effect elementsare closer together and thus, the vertical distance between sensors isreduced, the distance between shields is reduced, and the lead gap isreduced.

While the foregoing is directed to exemplary embodiments, other andfurther embodiments of the invention may be devised without departingfrom the basic scope thereof, and the scope thereof is determined by theclaims that follow.

1. A magnetic recording head, comprising: a first magnetoresistiveeffect element disposed on a first lower electrode; a second lowerelectrode disposed adjacent a first side of the first magnetoresistiveeffect element; a third lower electrode disposed adjacent a second sideof the first magnetoresistive effect element; a second magnetoresistiveeffect element disposed on the second lower electrode; a thirdmagnetoresistive effect element disposed on the third lower electrode;and a first upper electrode disposed between the second magnetoresistiveeffect element and the third magnetoresistive effect element.
 2. Themagnetic recording head of claim 1, further comprising a firstinsulating layer disposed on the first lower electrode, and between thefirst side of the first magnetoresistive effect element and the secondlower electrode.
 3. The magnetic recording head of claim 2, wherein thefirst insulating layer is further disposed between the second side ofthe first magnetoresistive effect element and the third lower electrode.4. The magnetic recording head of claim 3, further comprising a secondinsulating layer disposed between the second magnetoresistive effectelement and the first upper electrode.
 5. The magnetic recording head ofclaim 4, wherein the second insulating layer is further disposed betweenthe third magnetoresistive effect element and the first upper electrode.6. The magnetic recording head of claim 5, wherein the first upperelectrode is disposed on the first magnetoresistive effect element. 7.The magnetic recording head of claim 6, wherein the first upperelectrode is disposed on the second magnetoresistive effect element. 8.The magnetic recording head of claim 7, wherein the first upperelectrode is disposed on the third magnetoresistive effect element. 9.The magnetic recording head of claim 8, wherein the first upperelectrode comprises Ir, Ru, W, Au, Ag, Cu, Mo, Ni, Co, or Fe, a metalalloy that includes these metals, or a stacked film that includes thesemetals.
 10. The magnetic recording head of claim 9, wherein the secondlower electrode and the third lower electrode each comprise Ir, Ru, W,Au, Ag, Cu, Mo, Ni, Co, or Fe, a metal alloy that includes these metals,or a stacked film that includes these metals.
 11. The magnetic recordinghead of claim 1, further comprising: a second upper electrode coupled tothe second magnetoresistive effect element; and a third upper electrodecoupled to the third magnetoresistive effect element, wherein aninsulating layer is disposed between the first upper electrode and boththe second magnetoresistive effect element and the thirdmagnetoresistive effect element, and wherein the first upper electrodeis disposed on the first magnetoresistive effect element. 12-20.(canceled)